High-speed light emitters integrated on silicon chips can enable novel architectures for silicon-based optoelectronics. However, compound-semiconductor-based light emitters face major challenges for their integration with a silicon-based platform because of their difficulty of direct fabrication on a silicon substrate. Here, high-speed, highly-integrated graphene-based on-silicon-chip blackbody emitters in the near-infrared (NIR) region including telecommunication wavelength were…
High-Speed and On-Silicon-Chip Graphene Blackbody Emitters
Graphene is a two-dimensional nanocarbon material, having unique properties in electronic, optical and thermal properties, which can be applied for optoelectronic devices. Graphene-based blackbody emitters are also promising light emitters on silicon chip in NIR and mid-infrared region. However, although graphene-based blackbody emitters have been demonstrated under steady-state conditions or relatively slow modulation (100 kHz),…