OSI Laser Diode Inc., an OSI Systems Company, offers the LAPD 1550-30R detector as part of its avalanche photodiode family. The low-noise, high-sensitivity, 30 µm indium gallium arsenide (InGaAs) mesa structure joins the company’s 75 and 200 µm APD series. The high speed LAPD 1550-30R operates at 3.5 GHz and features a broad voltage breakdown (Vbr) curve of 30 V (minimum) to 40 V (maximum) with a typical response of 37 volts.
Suitable for applications in range-finding, optical time-domain reflectometers (OTDRs), and high-sensitivity line receivers, the LAPD 1550-30R is housed in a hermetically-sealed 3-pin, TO46 package with a lens cap. OSI Laser Diode’s low noise, 30 micron InGaAs APD module is RoHS compliant and operates from 1260 nm to 1650 nm with a typical operational wavelength at 1550 nm. The operating temperature ranges from -40 degrees to 85 degrees C, with a non-operating, storage temperature range from -40 degrees to 100 degrees C.
OSI Laser Diode
