Research & Development World

  • R&D World Home
  • Topics
    • Aerospace
    • Automotive
    • Biotech
    • Careers
    • Chemistry
    • Environment
    • Energy
    • Life Science
    • Material Science
    • R&D Management
    • Physics
  • Technology
    • 3D Printing
    • A.I./Robotics
    • Software
    • Battery Technology
    • Controlled Environments
      • Cleanrooms
      • Graphene
      • Lasers
      • Regulations/Standards
      • Sensors
    • Imaging
    • Nanotechnology
    • Scientific Computing
      • Big Data
      • HPC/Supercomputing
      • Informatics
      • Security
    • Semiconductors
  • R&D Market Pulse
  • R&D 100
    • 2025 R&D 100 Award Winners
    • 2025 Professional Award Winners
    • 2025 Special Recognition Winners
    • R&D 100 Awards Event
    • R&D 100 Submissions
    • Winner Archive
  • Resources
    • Research Reports
    • Digital Issues
    • Educational Assets
    • R&D Index
    • Subscribe
    • Video
    • Webinars
    • Content submission guidelines for R&D World
  • Global Funding Forecast
  • Top Labs
  • Advertise
  • SUBSCRIBE

Physicists take atomic-level peek at unexpected behavior in multilayered structures

By R&D Editors | November 1, 2013

Cross-sectional image of the multilayer structure on nanoscale. Image: Univ. of ArkansasA new class of materials developed at the Univ. of Arkansas may influence the next generation of nanodevices, in which integrated circuits are composed of many layers of dissimilar materials, such as ferromagnetic and superconducting oxides.

The researchers used innovative cross-sectional scanning tunneling microscopy and spectroscopy at the U.S. Dept. of Energy (DOE)’s Argonne Center for Nanoscale Materials to develop the first direct view of the physical and chemical behavior of electrons and atoms at boundary regions within the dissimilar materials.

“The fundamental issue here is that conventional modern day electronics based on silicon is very problematic to operate on a nanometer scale,” said Jak Chakhalian, prof. of physics in the J. William Fulbright College of Arts and Sciences at the Univ. of Arkansas. “Integrated circuits have many, many layers of functional material. As layers get thinner, the materials start behaving strangely and often unreliably. Now the question of the size of the interface, where two materials ‘talk’ to each other or influence each other, becomes critical.”

An article detailing the finding appears online in Nature Communications.

Te Yu Chien, a former postdoctoral research associate at the university, developed a technique at the Advanced Photon Source at Argonne to help Chakhalian’s research group with an easy way of looking directly at the interfaces between two dissimilar oxides.

“That was the breakthrough,” Chakhalian said. “He found the ‘knife’ that would cut through the multilayered ‘sandwich.’ Previously, it was extremely difficult, if not impossible, to look inside the layered complex oxide nanomaterial that we had developed here in our lab because they fractured when they were cut.

Chien’s technique provided the researchers with crucial information: Not only do the atomic layers talk to each other, but they also deeply influence each other on a 1- to 2-nm scale.

“We learned that in our materials, the layers strongly influence each other,” Chakhalian said. “For the first time, we showed how electrons and ions interact on the atomic scale in those complex multilayered structures, and it was not what a lot of people expected. This is fantastic. So now we can have beautiful control of these materials on the atomic scale obtained right at the interface, which defines the properties of those materials.”

Source: Univ. of Arkansas

Related Articles Read More >

U.S.–China pause eases rare-earth shock risk, but supply security questions remain
Materials driving the next phase in semiconductor performance
An easier way to separate rare earth elements
ORNL named on 20 R&D 100 Awards, including carbon-capture and AM tools
rd newsletter
EXPAND YOUR KNOWLEDGE AND STAY CONNECTED
Get the latest info on technologies, trends, and strategies in Research & Development.
RD 25 Power Index

R&D World Digital Issues

Fall 2024 issue

Browse the most current issue of R&D World and back issues in an easy to use high quality format. Clip, share and download with the leading R&D magazine today.

Research & Development World
  • Subscribe to R&D World Magazine
  • Sign up for R&D World’s newsletter
  • Contact Us
  • About Us
  • Drug Discovery & Development
  • Pharmaceutical Processing
  • Global Funding Forecast

Copyright © 2025 WTWH Media LLC. All Rights Reserved. The material on this site may not be reproduced, distributed, transmitted, cached or otherwise used, except with the prior written permission of WTWH Media
Privacy Policy | Advertising | About Us

Search R&D World

  • R&D World Home
  • Topics
    • Aerospace
    • Automotive
    • Biotech
    • Careers
    • Chemistry
    • Environment
    • Energy
    • Life Science
    • Material Science
    • R&D Management
    • Physics
  • Technology
    • 3D Printing
    • A.I./Robotics
    • Software
    • Battery Technology
    • Controlled Environments
      • Cleanrooms
      • Graphene
      • Lasers
      • Regulations/Standards
      • Sensors
    • Imaging
    • Nanotechnology
    • Scientific Computing
      • Big Data
      • HPC/Supercomputing
      • Informatics
      • Security
    • Semiconductors
  • R&D Market Pulse
  • R&D 100
    • 2025 R&D 100 Award Winners
    • 2025 Professional Award Winners
    • 2025 Special Recognition Winners
    • R&D 100 Awards Event
    • R&D 100 Submissions
    • Winner Archive
  • Resources
    • Research Reports
    • Digital Issues
    • Educational Assets
    • R&D Index
    • Subscribe
    • Video
    • Webinars
    • Content submission guidelines for R&D World
  • Global Funding Forecast
  • Top Labs
  • Advertise
  • SUBSCRIBE