Research & Development World

  • R&D World Home
  • Topics
    • Aerospace
    • Automotive
    • Biotech
    • Careers
    • Chemistry
    • Environment
    • Energy
    • Life Science
    • Material Science
    • R&D Management
    • Physics
  • Technology
    • 3D Printing
    • A.I./Robotics
    • Software
    • Battery Technology
    • Controlled Environments
      • Cleanrooms
      • Graphene
      • Lasers
      • Regulations/Standards
      • Sensors
    • Imaging
    • Nanotechnology
    • Scientific Computing
      • Big Data
      • HPC/Supercomputing
      • Informatics
      • Security
    • Semiconductors
  • R&D Market Pulse
  • R&D 100
    • Call for Nominations: The 2025 R&D 100 Awards
    • R&D 100 Awards Event
    • R&D 100 Submissions
    • Winner Archive
    • Explore the 2024 R&D 100 award winners and finalists
  • Resources
    • Research Reports
    • Digital Issues
    • R&D Index
    • Subscribe
    • Video
    • Webinars
  • Global Funding Forecast
  • Top Labs
  • Advertise
  • SUBSCRIBE

UV Narrow-Band Photodetector Based on Indium Oxide Nanocrystals

By Lobachevsky University | July 6, 2018

Semiconductor quantum dots (nanocrystals just a few nanometers in size) have attracted researchers’ attention due to the size dependent effects that determine their novel electrical and optical properties. By changing the size of such objects, it is possible to adjust the wavelength of the emission they absorb, thus implementing selective photodetectors, including those for UV radiation.

Narrow-band UV photodetectors find application in many areas, in particular in biomedicine where they are used for fluorescence detection or UV phototherapy. The materials commonly used in the manufacture of such photoreceivers are wide-bandgap oxides and nitrides, which offer a greater range of operating temperatures and transparency for visible and solar light in addition to a smaller size of the device.

Indium oxide (In2O3) is a transparent wide-bandgap semiconductor oxide with a direct band gap of about 3.6 eV and an indirect band gap of ~ 2.5 eV. It is well known that highly sensitive UV photodetectors can be created based on In2O3.

According to Alexey Mikhaylov, head of the laboratory at the UNN Research Institute of Physics and Technology, researchers together with their Indian colleagues from Indian Institute of Technology Jodhpur and Indian Institute of Technology Ropar managed to synthesize In2O3 nanocrystals in an aluminum oxide (Al2O3) film on silicon by implanting indium ions.

Ion implantation is a basic method in modern electronic technology, which makes it possible to control the size of inclusions thus allowing the optical properties of the photodetector to be tuned. The Al2O3 matrix used for indium oxide nanocrystals offers some advantages over other dielectrics in that this wide-bandgap material (8.9 eV) is transparent for a wide range of wavelengths.

“In the process of our work, we managed to achieve a significant reduction in the dark current (more than two times as compared to a similar photodetector based on In2O3 nanowires). By integrating the In2O3 phase into the wide-band matrix and due to its low dark current, the new photodetector shows record values of the responsivity and external quantum efficiency,” Mikhaylov notes.

The sensitivity band in the UV range has a width of only 60 nm and shows a high UV-visible rejection ratio (up to 8400). This photodetector is highly suitable for practical applications such as narrow-band spectrum-selective photodetectors. The device design based on ion-synthesized nanocrystals could provide a new approach for realizing a visible-blind photodetector.

Source: Lobachevsky University

Related Articles Read More >

TSMC’s N3P hits mass production, with N3X customer sampling slated for Q3–Q4 2025a
7 major R&D developments this week: Tariff uncertainty persists, Pfizer sells campus, Scania acquires Northvolt unit
While Trump tariffs spare phones/PCs, R&D could faces GPU cost pressures
Why IBM predicts quantum advantage within two years
rd newsletter
EXPAND YOUR KNOWLEDGE AND STAY CONNECTED
Get the latest info on technologies, trends, and strategies in Research & Development.
RD 25 Power Index

R&D World Digital Issues

Fall 2024 issue

Browse the most current issue of R&D World and back issues in an easy to use high quality format. Clip, share and download with the leading R&D magazine today.

Research & Development World
  • Subscribe to R&D World Magazine
  • Enews Sign Up
  • Contact Us
  • About Us
  • Drug Discovery & Development
  • Pharmaceutical Processing
  • Global Funding Forecast

Copyright © 2025 WTWH Media LLC. All Rights Reserved. The material on this site may not be reproduced, distributed, transmitted, cached or otherwise used, except with the prior written permission of WTWH Media
Privacy Policy | Advertising | About Us

Search R&D World

  • R&D World Home
  • Topics
    • Aerospace
    • Automotive
    • Biotech
    • Careers
    • Chemistry
    • Environment
    • Energy
    • Life Science
    • Material Science
    • R&D Management
    • Physics
  • Technology
    • 3D Printing
    • A.I./Robotics
    • Software
    • Battery Technology
    • Controlled Environments
      • Cleanrooms
      • Graphene
      • Lasers
      • Regulations/Standards
      • Sensors
    • Imaging
    • Nanotechnology
    • Scientific Computing
      • Big Data
      • HPC/Supercomputing
      • Informatics
      • Security
    • Semiconductors
  • R&D Market Pulse
  • R&D 100
    • Call for Nominations: The 2025 R&D 100 Awards
    • R&D 100 Awards Event
    • R&D 100 Submissions
    • Winner Archive
    • Explore the 2024 R&D 100 award winners and finalists
  • Resources
    • Research Reports
    • Digital Issues
    • R&D Index
    • Subscribe
    • Video
    • Webinars
  • Global Funding Forecast
  • Top Labs
  • Advertise
  • SUBSCRIBE