Research & Development World

  • Home Page
  • Topics
    • Aerospace
    • Archeology
    • Automotive
    • Biotech
    • Chemistry
    • COVID-19
    • Environment
    • Energy
    • Life Science
    • Material Science
    • R&D Market Pulse
    • R&D Management
    • Physics
  • Technology
    • 3D Printing
    • A.I./Robotics
    • Battery Technology
    • Controlled Environments
      • Cleanrooms
      • Graphene
      • Lasers
      • Regulations/Standards
      • Sensors
    • Imaging
    • Nanotechnology
    • Scientific Computing
      • Big Data
      • HPC/Supercomputing
      • Informatics
      • Security
      • Software
    • Semiconductors
  • 2021 R&D 100 Award Winners
    • R&D 100 Awards
    • 2020 Winners
    • Winner Archive
  • Resources
    • Digital Issues
    • Podcasts
    • Subscribe
  • Global Funding Forecast
  • Webinars

Ultra-low Transistors Could Work for Years Without Batteries

By University of Cambridge | October 21, 2016

A newly-developed form of transistor opens up a range of new electronic applications including wearable or implantable devices by drastically reducing the amount of power used. Devices based on this type of ultralow power transistor, developed by engineers at the University of Cambridge, could function for months or even years without a battery by “scavenging” energy from their environment.

 

Using a similar principle to a computer in sleep mode, the new transistor harnesses a tiny “leakage” of electrical current, known as a near-off-state current, for its operations. This leak, like water dripping from a faulty tap, is a characteristic of all transistors, but this is the first time that it has been effectively captured and used functionally. The results, reported in the journal Science, open up new avenues for system design for the Internet of Things, in which most of the things we interact with every day are connected to the Internet.

The transistors can be produced at low temperatures and can be printed on almost any material, from glass and plastic to polyester and paper. They are based on a unique geometry which uses a “non-desirable” characteristic, namely the point of contact between the metal and semiconducting components of a transistor, a so-called “Schottky barrier.”

“We’re challenging conventional perception of how a transistor should be,” says Professor Arokia Nathan of Cambridge’s Department of Engineering, the paper’s co-author. “We’ve found that these Schottky barriers, which most engineers try to avoid, actually have the ideal characteristics for the type of ultralow power applications we’re looking at, such as wearable or implantable electronics for health monitoring.”

The new design gets around one of the main issues preventing the development of ultralow power transistors, namely the ability to produce them at very small sizes. As transistors get smaller, their two electrodes start to influence the behavior of one another, and the voltages spread, meaning that below a certain size, transistors fail to function as desired. By changing the design of the transistors, the Cambridge researchers were able to use the Schottky barriers to keep the electrodes independent from one another, so that the transistors can be scaled down to very small geometries.

The design also achieves a very high level of gain, or signal amplification. The transistor’s operating voltage is less than a volt, with power consumption below a billionth of a watt. This ultralow power consumption makes them most suitable for applications where function is more important than speed, which is the essence of the Internet of Things.

“If we were to draw energy from a typical AA battery based on this design, it would last for a billion years,” says Dr. Sungsik Lee, the paper’s first author, also from the Department of Engineering. “Using the Schottky barrier allows us to keep the electrodes from interfering with each other in order to amplify the amplitude of the signal even at the state where the transistor is almost switched off.”

“This will bring about a new design model for ultralow power sensor interfaces and analogue signal processing in wearable and implantable devices, all of which are critical for the Internet of Things,” says Nathan.

“This is an ingenious transistor concept,” says Professor Gehan Amaratunga, Head of the Electronics, Power and Energy Conversion Group at Cambridge’s Engineering Department. “This type of ultra-low power operation is a pre-requisite for many of the new ubiquitous electronics applications, where what matters is function — in essence ‘intelligence’ — without the demand for speed. In such applications the possibility of having totally autonomous electronics now becomes a possibility. The system can rely on harvesting background energy from the environment for very long term operation, which is akin to organisms such as bacteria in biology.”

Source: University of Cambridge

Related Articles Read More >

R&D winner of the day: Monolithic Fiber Array Launcher
R&D collaborations looking to build expertise, in this week’s R&D power index
Invention addresses the problems of running a red light at traffic intersections
Liberty Defense airport shoe screening technology earns prestigious national award
2021 R&D Global Funding Forecast

Need R&D World news in a minute?

We Deliver!
R&D World Enewsletters get you caught up on all the mission critical news you need in research and development. Sign up today.
Enews Signup

R&D World Digital Issues

February 2020 issue

Browse the most current issue of R&D World and back issues in an easy to use high quality format. Clip, share and download with the leading R& magazine today.

Research & Development World
  • Subscribe to R&D World Magazine
  • Enews Sign Up
  • Contact Us
  • About Us
  • Drug Discovery & Development
  • Pharmaceutical Processing
  • 2021 Global Funding Forecast

Copyright © 2022 WTWH Media LLC. All Rights Reserved. The material on this site may not be reproduced, distributed, transmitted, cached or otherwise used, except with the prior written permission of WTWH Media
Privacy Policy | Advertising | About Us

Search R&D World

  • Home Page
  • Topics
    • Aerospace
    • Archeology
    • Automotive
    • Biotech
    • Chemistry
    • COVID-19
    • Environment
    • Energy
    • Life Science
    • Material Science
    • R&D Market Pulse
    • R&D Management
    • Physics
  • Technology
    • 3D Printing
    • A.I./Robotics
    • Battery Technology
    • Controlled Environments
      • Cleanrooms
      • Graphene
      • Lasers
      • Regulations/Standards
      • Sensors
    • Imaging
    • Nanotechnology
    • Scientific Computing
      • Big Data
      • HPC/Supercomputing
      • Informatics
      • Security
      • Software
    • Semiconductors
  • 2021 R&D 100 Award Winners
    • R&D 100 Awards
    • 2020 Winners
    • Winner Archive
  • Resources
    • Digital Issues
    • Podcasts
    • Subscribe
  • Global Funding Forecast
  • Webinars